Power Amplifier supports military/commercial applications. Consisting of 0.2 mm GaN HEMT MMIC power amplifier chip in flange mount package, Model APN180FP operates from 27–31 GHz with drain voltage of +28 V. Unit provides 21 dB of linear gain, +37 dBm of output power at 1 dB gain compression, and +39 dBm in saturation with Power Added Efficiency of 26% at midband. For less demanding applications, device can be operated from drain voltage as low as ...
June 11, 2013 - ThomasNet
Northrop Grumman Begins Sampling New Gallium Nitride Packaged Power Amplifier Redondo Beach CA (SPX) Jun 12, 2013 Northrop Grumman has developed a new gallium nitride (GaN) flange packaged power amplifier, APN180FP, targeting military and commercial Ka-band communication applications. This product represents the first commercial availability of a packaged, GaN-based component from the company. "The APN180FP provides customers with a powerful, easy-to-use, high-frequency ...
June 11, 2013 - Space War